You are here

S25FL128P, 128-MBIT, 3.0 V FLASH MEMORY | Cypress Semiconductor

S25FL128P, 128-MBIT, 3.0 V FLASH MEMORY

Last Updated: 
Aug 28, 2017
Version: 
*M

The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.
Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and regulated voltages are provided for the program operations. This device requires a high voltage supply to WP#/ACC pin for the Accelerated Programming mode.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.